Reliability of wire-bonding and solder joint for high temperature operation of power semiconductor device

被引：96

作者：

Yamada, Y.

Takaku, Y.

Yagi, Y.

Nakagawa, I.

Atsumi, T.

Shirai, M.

Ohnuma, I.

Ishida, K.

机构：

[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

[2] Tohoku Univ, Grad Sch Engn, Dept Mat Sci, Japan Sci & Technol Agcy,CREST, Sendai, Miyagi 9808579, Japan

[3] Toyota Motor Co Ltd, Toyota, Aichi 4718572, Japan

来源：

MICROELECTRONICS RELIABILITY | 2007年 / 47卷 / 12期

关键词：

Electric power systems - Electron diffraction - High temperature effects - Recrystallization (metallurgy) - Reliability theory - Scanning electron microscopy - Semiconductor devices;

D O I：

10.1016/j.microrel.2007.07.102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thick Al wires bonded on chips of power semiconductor devices were examined for thermal cycle tests, then the bonded joints were cut using microtome method, after that those were observed by scanning electron microscope and analyzed by electron back scattered diffraction. Some cracks were observed between Al wires and the chips, unexpectedly the crack lengths were almost constant for -40/ 150 degrees C, -40/200 degrees C and -40/250 degrees C tests. It is considered that re-crystallization has been progressed during the high temperature side of the thermal cycle tests. Furthermore, joint samples were prepared using high temperature solders such as Zn-Al and Bi with CuAlMn, Direct Bonded Copper insulated substrates and Mo heatsinks. The fabricated samples were evaluated by scanning acoustic microscope before and after thermal cycle tests. Consequently, almost neither serious damages nor delaminations were observed for -40/200 degrees C and -40/250 degrees C tests. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：2147 / 2151

页数：5

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MICROELECTRONICS RELIABILITY, 2006, 46 (9-11) :1932-1937

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