Electrochemical and in situ XRD studies of the Li reaction with combinatorially sputtered Mo1-xSnx (0 ≤ x ≤ 0.50) thin films

被引:22
作者
Bonakdarpour, A [1 ]
Hewitt, KC
Turner, RL
Dahn, JR
机构
[1] Dalhousie Univ, Dept Phys, Halifax, NS B3H 3J5, Canada
[2] 3M Co, Ctr 3M, St Paul, MN 55144 USA
关键词
D O I
10.1149/1.1646138
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Detailed electrochemical studies of the reaction of Li with combinatorially sputter-deposited BCC (x less than or equal to 0.4) and nanocrystalline (x greater than or equal to 0.4) Mo1-xSnx thin films are reported for 0.05 less than or equal to x less than or equal to 0.5. In situ X-ray diffraction (XRD) performed for x = 0.22, 0.36, 0.44, show no evidence for formation of new phases during the reaction with Li. During charge/discharge cycling, a definite and periodic variation of the BCC Mo1-xSnx (110) Bragg angle for x less than or equal to 0.40 is strong evidence for a topotactic Li insertion mechanism. Sensitive differential capacity (dq/dV vs. V) measurements on Li/Mo1-xSnx cells with x less than or equal to 0.36 show no new peaks for as many 75 cycles, supporting a topotactic insertion reaction. However, in the higher Sn content films (x greater than or equal to 0.4), the appearance and growth of new dq/dV peaks after the first cycle is consistent with the aggregation of Sn clusters and the formation of Li-Sn phases. Inclusion of about 20% oxygen in nanostructured films seems to prevent Sn aggregation and improve the cycling performance markedly. The best materials give specific capacities near 350 mAh/g, have densities near 9 g/cc and cycle well. This could be the first report of true topotactic Li insertion into a metal host. (C) 2004 The Electrochemical Society.
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收藏
页码:A470 / A483
页数:14
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