Effect of thermal annealing on the surface and the microstructural properties of ZnO thin films grown on p-Si (100) substrates

被引:14
作者
Kim, TW
Lee, KH
Lee, HS
Lee, JY
Kang, SG
Kim, DW
Cho, WJ
机构
[1] Hanyang Univ, Adv Semicond Res Ctr, Div Elect & Comp Engn, Seoul 133791, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[3] Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea
[4] Korea Inst Sci & Technol, Nanodevice Res Ctr, Semicond Mat Lab, Seoul 130650, South Korea
关键词
transmission electron microscopy; radio frequency magnetron sputtering; ZnO;
D O I
10.1016/j.jcrysgro.2003.10.076
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The annealing effect on the surface and the microstructural properties of ZnO thin films grown on p-Si (100) substrates by radio-frequency magnetron sputtering have been investigated using atomic force microscopy (AFM), X-ray diffraction (XRD), and transmission electron microscopy (TEM) measurements. The AFM images and the XRD patterns showed that the crystallinity of the annealed ZnO films was enhanced by annealing in comparison with that of the as-grown ZnO films, and XRD patterns, pole figures, and TEM images showed that the as-grown and the annealed ZnO films grown on Si (100) substrates had a c-axis preferential orientation in the [0001] crystal direction. These results indicate that the surface and the microstructural qualities of the ZnO films grown on p-Si (100) substrates are improved by thermal treatment. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:72 / 77
页数:6
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