Several- and many-electron artificial-atoms at filling factors between 2 and 1

被引：15

作者：

Austing, G

Tokura, Y

Honda, T

Tarucha, S

Danoesastro, M

Janssen, J

Oosterkamp, T

Kouwenhoven, L

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] Delft Univ Technol, Dept Appl Phys, NL-2600 GA Delft, Netherlands

[3] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 1B期

关键词：

single electron transistor; double barrier resonant tunneling structure; quantum dot; quantum Hall effect; maximum density droplet; Coulomb blockade; artificial-atom;

D O I：

10.1143/JJAP.38.372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We introduce new phenomena that can be studied in an artificial-atom vertical single electron transistor. As we move from the few-electron regime to the several-electron regime, and then the many-electron regime, features in the conductance peaks related to magnetic field induced spin polarization evolve. This allows us to probe the spin-flip region bounded by the lest single-particle crossing at low field, and the eventual formation of a maximum density droplet at high field.

引用

收藏

页码：372 / 375

页数：4

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