Electrochemical etch-stop in TMAH without externally applied bias

被引：13

作者：

French, PJ ^{[1
]}

Nagao, M ^{[1
]}

Esashi, M ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL,DIMES,FAC ELECT ENGN,LAB ELECT INSTRUMENTAT,NL-2600 GA DELFT,NETHERLANDS

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1996年 / 56卷 / 03期

关键词：

electrochemical etch-stop; tetramethyl ammonium hydroxide;

D O I：

10.1016/S0924-4247(96)01331-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a method for electrochemical etch-stop without the use of an externally applied bias voltage. This greatly simplifies the etch process and enables batch fabrication to be achieved. The process is based on the formation of a wet battery when a gold-chrome/n-type silicon/TMAH construction is formed. Bulk micromachined membranes can therefore be formed using an n-type etch-stop.

引用

页码：279 / 280

页数：2