Intrinsic electronic transport through alkanedithiol self-assembled monolayer

被引:16
作者
Lee, T [1 ]
Wang, WY [1 ]
Reed, MA [1 ]
机构
[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 1B期
关键词
organic devices; self-assembled monolayer; alkanethiol; tunneling; molecular electronics;
D O I
10.1143/JJAP.44.523
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electronic transport through an alkanedithiol self-assembled monolayer (SAM) is investigated using a nanometer scale device. Temperature-independent current-voltage characteristics are observed, indicating tunneling is the main conduction mechanism. The measured current-voltage characteristics are analyzed with a metal-insulator-metal tunneling model. The inelastic electron tunneling spectroscopy (IETS) study on the octanedithiol device clearly shows the vibrational signatures of molecules. The pronounced IETS peaks correspond to vibrational modes perpendicular to the junction interface, which include the stretching modes of Au-S (at 33 mV) and C-C (at 133 mV), and wagging mode of CH2 (at 158 mV). Intrinsic linewidths are determined as 1.69 (upper limit), 3.73 +/- 10.98, and 13.5 +/- 2.4 meV for Au-S, C-C streching modes, and CH2 wagging mode, respectively. The observed peak intensities and peak widths are in good agreement with theoretical predictions.
引用
收藏
页码:523 / 529
页数:7
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