Electrochemical deposition of Bi2Te3 for thermoelectric microdevices

被引：78

作者：

Tittes, K

Bund, A

Plieth, W ^{[1
]}

Bentien, A

Paschen, S

Plötner, M

Gräfe, H

Fischer, WJ

机构：

[1] Tech Univ Dresden, Inst Phys Chem & Electrochem, D-01062 Dresden, Germany

[2] Max Planck Inst Chem Phys Solids, D-01187 Dresden, Germany

[3] Tech Univ Dresden, Semicond Technol & Microsyst Lab, D-01062 Dresden, Germany

来源：

JOURNAL OF SOLID STATE ELECTROCHEMISTRY | 2003年 / 7卷 / 10期

关键词：

bismuth telluride films; cyclic voltammetry; electrodeposition; thermoelectric battery; thermoelectric sensor;

D O I：

10.1007/s10008-003-0378-8

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The electrolyses of solutions of bismuth oxide and tellurium oxide in nitric acid with molar ratios of Bi:Te=3:3-4:3 lead to cathodic deposits of films of bismuth telluride (Bi2Te3), an n-type semiconductor. Current densities of 2-5 mA/cm(2) were applied. Voltammetric investigations showed that Bi2Te3 deposition occurred at potentials more negative than -0.125 V (Ag/AgCl, 3 M KCl). The deposit was identified as bismuth telluride (gamma-phase) by X-ray analysis. Hall-effect measurements verified the n-type semiconducting behaviour. The films can be deposited in microstructures for thermoelectric microdevices like thermoelectric batteries or thermoelectric sensors.

引用

页码：714 / 723

页数：10

共 16 条

[1] OSCILLOGRAPHIC POLAROGRAPHIC WAVES FOR THE REVERSIBLE DEPOSITION OF METALS ON SOLID ELECTRODES [J].