The origin of 505 nm-peaked photoluminescence from Ba3MgSi2O8: Eu2+, Mn2+ phosphor for white-light-emitting diodes

被引：35

作者：

Ma, Liang ^{[1
,3
]}

Wang, Da-Jian ^{[1
,3
]}

Zhang, Hong-Mei ^{[1
,3
]}

Gu, Tie-Cheng ^{[1
,3
]}

Yuan, Zhi-Hao ^{[2
,3
]}

机构：

[1] Tianjin Univ Technol, Inst Mat Phys, Tianjin 300384, Peoples R China

[2] Tianjin Univ Technol, Nanomat & Nanotechnol Res Ctr, Tianjin 300191, Peoples R China

[3] Tianjin Key Lab Photo Elect Mat & Devices, Tianjin 300384, Peoples R China

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 02期

关键词：

D O I：

10.1149/1.2817472

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A 505 nm-peaked photoluminescence of Ba3MgSi2O8: Eu2+, Mn2+ phosphor for white-light-emitting diodes originating from an intermediate phase, Ba2SiO4: Eu2+, is found. The corresponding optical properties of this 505 nm-peaked photoluminescence resemble those of Ba2SiO4: Eu2+ well. X-ray diffraction (XRD) results confirm the existence of Ba2SiO4 in the Ba3MgSi2O8. The formation of Ba2SiO4 is ascribed to the phase equilibrium during firing. Addition of flux inhibits the formation of intermediate phases and improves the crystallinity of Ba3MgSi2O8. Specifically, as a proper amount of NH4Cl is added, the 505 nm-peaked photoluminescence disappears and the XRD peaks attributed to Ba2SiO4 disappear as well. (c) 2007 The Electrochemical Society.

引用

页码：E1 / E4

页数：4

共 29 条

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