Enhancement of spin-dependent hole delocalization in degenerate asymmetric double quantum wells

被引:7
作者
Kemerink, M
Koenraad, PM
Christianen, PCM
Geim, AK
Maan, JC
Wolter, JH
Henini, M
机构
[1] UNIV NIJMEGEN,HIGH FIELD MAGNET LAB,6525 ED NIJMEGEN,NETHERLANDS
[2] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND
来源
PHYSICAL REVIEW B | 1996年 / 53卷 / 15期
关键词
D O I
10.1103/PhysRevB.53.10000
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Exact, self-consistently calculated eigenfunctions and eigenvalues of the valence band in degenerate asymmetric double quantum wells are obtained from the full 4x4 Luttinger Hamiltonian for different hole densities. We found the solutions to be extremely sensitive to the charge density. The charge induces an extra asymmetry in the confining potential and leads to a smaller separation of the hole levels in the adjacent wells. This strongly enhances the different leakage of wave functions with opposite magnetic moment, called spin-dependent hole delocalization (SDHD). Furthermore, it is shown that the SDHD of the heavy-holt: states can be enhanced by increasing the confinement of the Light-hole states through adjustment of the height of the confining barriers. The theoretical results are shown to be in excellent agreement with transport and optical experiments, which are proven to be largely determined by space-charge effects.
引用
收藏
页码:10000 / 10007
页数:8
相关论文
共 27 条
[1]   HOLE SUBBAND AT GAAS/ALGAAS HETEROJUNCTIONS AND QUANTUM WELLS [J].
ANDO, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1985, 54 (04) :1528-1536
[2]   HOLE SUBBANDS IN STRAINED GAAS-GA1-XALX AS QUANTUM-WELLS - EXACT SOLUTION OF THE EFFECTIVE-MASS EQUATION [J].
ANDREANI, LC ;
PASQUARELLO, A ;
BASSANI, F .
PHYSICAL REVIEW B, 1987, 36 (11) :5887-5894
[3]   LANDAU-LEVELS OF THE TWO-DIMENSIONAL HOLE GAS IN GAAS WITH INCLUSION OF THE ANISOTROPY OF THE BAND-STRUCTURE [J].
BANGERT, E ;
LANDWEHR, G .
SURFACE SCIENCE, 1986, 170 (1-2) :593-600
[4]  
Bastard Gerald, 1988, Wave mechanics applied to semiconductor heterostructures
[5]   CHARGE-TRANSFER AND ELECTROABSORPTION IN AN ELECTRIC-FIELD TUNABLE DOUBLE-QUANTUM-WELL STRUCTURE [J].
BERNHARD, K ;
ZRENNER, A ;
BOHM, G ;
TRANKLE, G ;
WEIMANN, G .
SOLID-STATE ELECTRONICS, 1994, 37 (4-6) :1307-1310
[6]   EFFECTIVE MASSES OF HOLES AT GAAS-ALGAAS HETEROJUNCTIONS [J].
BROIDO, DA ;
SHAM, LJ .
PHYSICAL REVIEW B, 1985, 31 (02) :888-892
[7]   THE JUSTIFICATION FOR APPLYING THE EFFECTIVE-MASS APPROXIMATION TO MICROSTRUCTURES [J].
BURT, MG .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (32) :6651-6690
[8]   THEORY OF HOLE REFRACTIONS FROM HETEROJUNCTIONS [J].
CHUANG, SL .
PHYSICAL REVIEW B, 1989, 40 (15) :10379-10390
[9]   CONNECTION RULES FOR ENVELOPE FUNCTIONS AT SEMICONDUCTOR-HETEROSTRUCTURE INTERFACES [J].
CUYPERS, JP ;
VANHAERINGEN, W .
PHYSICAL REVIEW B, 1993, 47 (16) :10310-10318
[10]   HOLE SUBBAND STATES OF GAAS/ALXGA1-XAS QUANTUM-WELLS WITHIN THE 6X6 LUTTINGER MODEL [J].
EDWARDS, G ;
VALADARES, EC ;
SHEARD, FW .
PHYSICAL REVIEW B, 1994, 50 (12) :8493-8501