High-performance logic circuits constructed on single CdS nanowires

被引：143

作者：

Ma, Ren-Min

Dai, Lun ^{[1
]}

Huo, Hai-Bin

Xu, Wan-Jin

Oin, G. G.

机构：

[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[2] Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

NANO LETTERS | 2007年 / 7卷 / 11期

关键词：

D O I：

10.1021/nl0715286

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A high-performance NOT logic gate (inverter) was constructed by combining two identical n-channel metal-semiconductor field-effect transistors (MESFETs) made on a single US nanowire (NW). The inverter has a voltage gain as high as 83, which is the highest reported so far for inverters made on one-dimensional nanomaterials. The MESFETs used in the inverter circuit show excellent transistor performance, such as high on/off current ratio (similar to 10(7)), low threshold voltage (similar to-0.4 V), and low subthreshold swing (similar to 60 mV/dec). With the assembly of three identical NW MESFETs, NOR and NAND gates have been constructed.

引用

收藏

页码：3300 / 3304

页数：5

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