Sb-enhanced diffusion in strained Si1-xGex:: Dependence on biaxial compression

Enhanced Sb diffusion in biaxially compressed Si1-xGex layers (x=0.1 and 0.2) is investigated. It is shown that the contribution of the biaxial strain to enhance the process of Sb diffusion in Si1-xGex increases with increasing misfit compression from a factor of similar to 3 at 0.73 GPa (x=0.1) to similar to 10 at 1.40 GPa (x=0.2). Assuming the prefactors to be stress-independent, the Sb diffusion coefficients in biaxially compressed Si0.9Ge0.1 and Si0.8Ge0.2 were extracted as 0.4x10(2) exp{-[3.98 (eV) +/- 0.12]/kT} and 1.3 x 10(2) exp{-[3.85 (eV) +/- 0.12]/kT} cm(2)/s, respectively. [S0163-1829(99)02808-8].