Excitation properties of SiC photoluminescence

被引：1

作者：

Egilsson, T ^{[1
]}

Ivanov, IG

Henry, A

Janzén, E

机构：

[1] Linkoping Univ, IFM, S-58183 Linkoping, Sweden

[2] ABB Corp Res, S-72178 Vasteras, Sweden

来源：

PHYSICA SCRIPTA | 1999年 / T79卷

关键词：

D O I：

10.1238/Physica.Topical.079a00050

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on photoluminescence excitation (PLE) studies of defect luminescence in SiC. Two examples are given illustrating the main advantages of the technique. First, the benefits of selective excitation are shown in sorting out a complicated PL spectrum in electron irradiated 4H-SiC. Secondly, the possibility of detecting high energy excited states is demonstrated by the PLE spectrum of the D-1 centre in 4H-SiC

引用

页码：50 / 52

页数：3