Search for the optimal channel architecture for 0.18/0.12 mu m bulk CMOS experimental study

被引：10

作者：

Bouillon, P

Skotnicki, T

Kelaidis, C

Gwoziecki, R

Dollfus, P

Regolini, JL

Sagnes, I

Bodnar, S

机构：

来源：

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年

关键词：

D O I：

10.1109/IEDM.1996.554045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Varied advanced architectures for 0.18/0.12 CMOS are investigated experimentally. Performances of heavy ion implanted, epitaxial and/or SiGe channels are compared through their electrical and physical characteristics. Conclusions on optimal 0.18/0.12 mu m channel architectures are drawn with respect to different applications. Very promising transport properties in SiGe channels are reported.

引用

页码：559 / 562

页数：4