Observation of boron doping induced surface roughening in silicon molecular beam epitaxy

被引：5

作者：

Lu, XK

Jiang, ZM

Zhu, HJ

Zhang, XJ

Wang, X

机构：

[1] FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA

[2] FUDAN UNIV,FUDAN T D LEE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 23期

关键词：

D O I：

10.1063/1.116573

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron doping induced surface roughening was observed in conventional silicon molecular beam epitaxy, Reflection high energy electron diffraction and cross-sectional transmission electron microscopy revealed that as growth continued, tile growth surface remained no longer planar but developed {113} facets. The facets evolved along with growth, and finally resulted in a severely roughened surface. The evolution of the roughening was found to remain the same in the boron doping concentration range of 1 x 10(17)-2 x 10(20) cm(-3) and the growth temperature range of 500-650 degrees C, This surface roughening effect is attributed to boron segregation behavior. (C) 1996 American Institute of Physics.

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页码：3278 / 3280

页数：3

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