Epitaxial-strain-induced insulator-superconductor transition in undoped and lightly doped La2CuO4

被引：42

作者：

Si, WD ^{[1
]}

Xi, XX ^{[1
]}

机构：

[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 02期

关键词：

D O I：

10.1063/1.1338966

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the epitaxial-strain effects on transport properties of pulsed-laser-deposited undoped and lightly doped La2CuO4 thin films. The epitaxial strain is controlled by using SrLaAlO4 buffer layers of different thicknesses on SrTiO3 substrates. The La2CuO4 films are insulating under tensile epitaxial strain, but when the strain is sufficiently compressive they become superconducting. Since the undoped and lightly doped La2CuO4 are known to be superconducting when interstitial oxygen is inserted, the epitaxial-strain-induced insulator-superconductor transition suggests a significant interplay between strain and oxygenation in the films. (C) 2001 American Institute of Physics.

引用

页码：240 / 242

页数：3

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