PZT polarization voltage effects on off-centered PZT patch actuating silicon membrane

被引：5

作者：

Guirardel, M

Bergaud, C

Cattan, E

Remiens, D

Belier, B

Petitgrand, S

Bosseboeuf, A

机构：

[1] CNRS, LAAS, F-31077 Toulouse 4, France

[2] Univ Valenciennes, MIMM, F-59600 Maubeuge, France

[3] Univ Paris 11, CNRS, IEF, UMR 8622, F-91405 Orsay, France

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2004年 / 110卷 / 1-3期

关键词：

piezoelectric thin films; silicon membrane; static and dynamic characterizations;

D O I：

10.1016/j.sna.2003.08.016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the static and dynamic behavior of piezoelectric (PZT) actuated SiO2/Si membranes with an off-centered PZT patch. Three-dimensional wide-field interferometer has been used to achieve measurement of membrane topography and bending. It is demonstrated that the piezoelectric coefficient d(31) can be extracted directly from these three-dimensional static deformation measurements. We have also shown that polarization voltage of an off-centered PZT patch influences in a different manner the resonant frequency shift of the first and the second vibration modes. Degenerated modes can be also discriminated thanks to the positioning of the PZT patch. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：385 / 389

页数：5

共 8 条

[1] High resolution study of domain nucleation and growth during polarization switching in Pb(Zr,Ti)O3 ferroelectric thin film capacitors [J].