Power-Loss Breakdown of a 750-V 100-kW 20-kHz Bidirectional Isolated DC-DC Converter Using SiC-MOSFET/SBD Dual Modules

被引：94

作者：

Akagi, Hirofumi ^{[1
]}

Yamagishi, Tatsuya ^{[1
]}

Tan, Nadia Mei Lin ^{[2
]}

Kinouchi, Shin-ichi ^{[3
]}

Miyazaki, Yuji ^{[4
]}

Koyama, Masato ^{[5
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Tokyo 1528552, Japan

[2] Univ Tenaga Nas, Dept Elect Power Engn, Selangor 43000, Malaysia

[3] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan

[4] Mitsubishi Electr Corp, Power Device Works, Fukuoka 8190192, Japan

[5] Kanazawa Inst Technol, Dept Elect & Elect Engn, Nonoichi, Ishikawa 9218501, Japan

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2015年 / 51卷 / 01期

基金：

日本学术振兴会;

关键词：

Bidirectional isolated dc-dc converters; conversion efficiency; dual-active-bridge configuration; SiC-MOSFET; SYSTEM;

D O I：

10.1109/TIA.2014.2331426

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper describes the design, construction, and testing of a 750-V 100-kW 20-kHz bidirectional isolated dual-active-bridge dc-dc converter using four 1.2-kV 400-A SiC-MOSFET/SBD dual modules. The maximum conversion efficiency from the dc-input to the dc-output terminals is accurately measured to be as high as 98.7% at 42-kW operation. The overall power loss at the rated-power (100 kW) operation, excluding the gate-drive and control circuit losses, is divided into the conduction and switching losses produced by the SiC modules, the iron and copper losses due to magnetic devices, and the other unknown loss. The power-loss breakdown concludes that the sum of the conduction and switching losses is about 60% of the overall power loss and that the conduction loss is nearly equal to the switching loss at the 100-kW and 20-kHz operation.

引用

页码：420 / 428

页数：9

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