Characteristics of ferroelectric Pb(Zr,Ti)O3 thin films having Pt/PtOx electrode barriers

被引：25

作者：

Lee, K

Rhee, BR

Lee, C

机构：

[1] Sangji Univ, Dept Comp & Elect Phys, Wonju 220702, Kangwondo, South Korea

[2] Optron Tec Inc, Kyungsangnamdo 641465, South Korea

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 06期

关键词：

D O I：

10.1063/1.1391226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the feasibility of the Pt/PtOx multilayer as an electrode barrier for Pb(Zr,Ti)O-3 (PZT)-based ferroelectric random access memories. PtOx and Pt layers were prepared on polycrystalline-Si/SiO2/Si substrates by means of the sputtering method in Ar and O-2 ambience, and the Pb(Zr0.53Ti0.47)O-3 layer was prepared by the sol-gel method. A capacitor consisting of Pt/PtOx/PZT/PtOx/Pt/PtOx/poly-Si had a remanent polarization of 18 muC/cm(2) and a low coercive field of 32 kV/cm. The polarization fatigue behavior of test capacitors was improved as compared with that of Pt/PZT/Pt, which showed negligible fatigue loss of 15% after 10(11) switching repetitions with a frequency of 1 MHz. (C) 2001 American Institute of Physics.

引用

页码：821 / 823

页数：3

共 6 条

[1] ELECTRICAL-PROPERTIES OF FERROELECTRIC THIN-FILM CAPACITORS WITH HYBRID (PT,RUO2) ELECTRODES FOR NONVOLATILE MEMORY APPLICATIONS [J].