Experimental validation of mechanical stress models by micro-Raman spectroscopy

被引：21

作者：

DeWolf, I ^{[1
]}

Pozzat, G ^{[1
]}

Pinardi, K ^{[1
]}

Howard, DJ ^{[1
]}

Ignat, M ^{[1
]}

Jain, SC ^{[1
]}

Maes, HE ^{[1
]}

机构：

[1] INST NATL POLYTECH GRENOBLE,F-38402 ST MARTIN DHERES,FRANCE

来源：

MICROELECTRONICS AND RELIABILITY | 1996年 / 36卷 / 11-12期

关键词：

D O I：

10.1016/0026-2714(96)00190-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that micro-Raman spectroscopy offers a unique tool for the validation of stress models for microelectronics devices. Starting from an analytical or numerical model that describes the variation of local stress in a device, the corresponding Raman shift is calculated and compared with the data. In this way feed-back is given to the model. This technique is demonstrated for stripes (Si3N4, CoSi2, W) on a Si substrate, but can be applied to any device where Raman data can be obtained. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：1751 / 1754

页数：4

共 6 条

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