P-N junction mechanism on improved NiO/TiO2 photocatalyst

被引：114

作者：

Chen, Cha-Jung ^{[1
]}

Liao, Chi-Hung ^{[1
]}

Hsu, Kai-Chien ^{[1
]}

Wu, Yi-Ting ^{[1
]}

Wu, Jeffrey C. S. ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Chem Engn, Taipei 10617, Taiwan

来源：

CATALYSIS COMMUNICATIONS | 2011年 / 12卷 / 14期

关键词：

Photocatalysis; P-N junction; TiO2; NiO; NIO THIN-FILMS; UV-IRRADIATION; TIO2; DEGRADATION; TEMPERATURE; LIGHT;

D O I：

10.1016/j.catcom.2011.05.009

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

The composite photocatalyst comprising p-type NiO and n-type TiO2 showed improved photoactivity due to the inhibition of electron-hole recombination. A series of P-N junction photocatalysts, NiO/TiO2, were prepared by incipient wetness impregnation. The photocatalysts were characterized by UV-vis spectroscopy, XRD and XPS. The photoactivity of photocatalysts was tested by the degradation of methylene blue. The results showed that 0.5 wt.% NiO/TiO2 had the highest activity as compared with TiO2. A P-N junction mechanism was proposed and verified that the photocurrent could be enhanced under forward bias in the NiO/TiO2 film. The photoactivity enhancement is attributed to P-N junction and co-catalyst effects. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1307 / 1310

页数：4

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