Universal dynamics during and after ultrafast laser-induced semiconductor-to-metal transitions

被引：42

作者：

Callan, JP

Kim, AMT

Roeser, CAD

Mazur, E

机构：

[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[2] Harvard Univ, Div Engn & Appl Sci, Gordon McKay Lab, Cambridge, MA 02138 USA

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.64.073201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We observe common features in semiconductor-to-metal transitions induced by femtosecond laser pulses in crystalline GaAs, amorphous GaAs, and Sb-rich films of amorphous GeSb, by tracking ultrafast changes in the spectral dielectric function. The dielectric function of the metal-like state reveals a decay in the plasma frequency with time after the transition. In addition, the plasma frequency roughly decreases with increasing excitation fluence.

引用

页数：4

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