Crystallization behavior and physical properties of Sb-excess Ge2Sb2+xTe5 thin films for phase change memory (PCM) devices

被引：46

作者：

Ryu, SO ^{[1
]}

Yoon, SM

Choi, KJ

Lee, NY

Park, YS

Lee, SY

Yu, BG

Park, JB

Shin, WC

机构：

[1] ETRI, Basic Res Labs, Taejon 305600, South Korea

[2] Samsung Adv Inst Technol, Yongin 449712, South Korea

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2006年 / 153卷 / 03期

关键词：

D O I：

10.1149/1.2164768

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The crystallization behavior of antimony (Sb)- excess Ge2Sb2+ xTe5 was examined. Sb-excess GST showed crystallization (T-C) and melting (T-M) temperatures of 205 and 550 degrees C, respectively, slightly higher TC and lower TM values than stoichiometric Ge2Sb2Te5 compounds. It also showed a substantially different crystallization behavior compared to the stoichiometric Ge2Sb2Te5 composition. The resulting Sb-excess GeSbTe thin film showed a grain growth dominated crystallization behavior. (c) 2006 The Electrochemical Society.

引用

页码：G234 / G237

页数：4

共 5 条

[1] Ti diffusion in chalcogenides: a ToF-SIMS depth profile characterization approach [J].