Photoluminescence line-shape analysis in quantum wells embedded in superlattices

被引：3

作者：

Donchev, V

Shtinkov, N

Germanova, K

Ivanov, I

Brachkov, H

Ivanov, T

机构：

[1] Univ Sofia, Fac Phys, Dept Condensed Matter Phys, Sofia 1164, Bulgaria

[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2001年 / 15卷 / 1-2期

关键词：

AlAs/GaAs; embedded quantum wells; photoluminescence; line-shape analysis;

D O I：

10.1016/S0928-4931(01)00239-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature evolution of the main photoluminescence (PL) mechanisms, in GaAs quantum wells embedded in short-period AlAs/GaAs superlattices, is investigated. PL spectra are measured from 2 to 300 K. A detailed line-shape analysis of the PL peaks is performed by means of a statistical model, including both free exciton and free carrier recombination. The Fits based on this model reproduce satisfactorily the experimental PL line shapes and allow to assess quantitatively the relative contributions of free excitons and free carriers to the radiative recombination at different temperatures. The results indicate the predominant role of free excitons in the radiative recombination up to room temperature, and are consistent with the mass action law. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：75 / 77

页数：3

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