Low-voltage organic thin-film transistors with large transconductance

被引：111

作者：

Klauk, Hagen

Zschieschang, Ute

Halik, Marcus

机构：

[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

[2] Univ Erlangen Nurnberg, Inst Polymer Mat, D-91058 Erlangen, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 07期

关键词：

D O I：

10.1063/1.2794702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed an organic thin-film transistor (TFT) technology that aims at providing a good balance of static and dynamic performance parameters. An inverted staggered (bottom-gate, top-contact) device structure with patterned metal gates, a room-temperature-deposited gate dielectric providing a capacitance of 0.7 mu F/cm(2), and vacuum-deposited pentacene as the semiconductor were employed. The TFTs have a channel length of 10 mu m, a carrier mobility of 0.4 cm(2)/V s, an on/off current ratio of 10(7), a subthreshold swing of 100 mV/decade, and a transconductance per channel width of 40 mu S/mm. Ring oscillators operate with supply voltages as low as 2 V and with signal propagation delays as low as 200 mu s per stage. (C) 2007 American Institute of Physics.

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页数：7

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