Nanopowder management and control of plasma parameters in electronegative SiH4 plasmas

被引:66
作者
Denysenko, IB
Ostrikov, K
Xu, S [1 ]
Yu, MY
Diong, CH
机构
[1] Nanyang Technol Univ, NIE, Plasma Sources & Applicat Ctr, Singapore 637616, Singapore
[2] Kharkiv Natl Univ, Sch Phys & Technol, UA-61077 Kharkov, Ukraine
[3] Univ Sydney, Sch Phys, Sydney, NSW 2006, Australia
[4] Flinders Univ S Australia, SOCPES, Adelaide, SA 5001, Australia
[5] Ruhr Univ Bochum, D-44780 Bochum, Germany
关键词
D O I
10.1063/1.1618356
中图分类号
O59 [应用物理学];
学科分类号
摘要
Management of nanosize powder particles via control of plasma parameters in a low-pressure SiH4 discharge for silicon microfabrication technologies is considered. The spatial profiles of electron and positive/negative ion number densities, electron temperature, and charge of the fine particles are obtained using a self-consistent fluid model of the electronegative plasmas in the parallel plate reactor geometry. The model accounts for variable powder size and number density, powder-charge distribution, local plasma nonuniformity, as well as UV photodetachment of electrons from the nanoparticles. The relations between the equilibrium discharge state and powder properties and the input power and neutral gas pressure are studied. Methods for controlling the electron temperature and SiH3- anion (here assumed to be the powder precursor) density, and hence the powder growth process, are proposed. It is shown that by controlling the neutral gas pressure, input power, and powder size and density, plasma density profiles with high levels of uniformity can be achieved. Management of powder charge distribution is also possible through control of the external parameters. (C) 2003 American Institute of Physics.
引用
收藏
页码:6097 / 6107
页数:11
相关论文
共 63 条
[1]  
AZAM ABM, 2000, J PHYS, V16, P56
[2]   The radial structure of a plasma column sustained by a surface wave [J].
Azarenkov, NA ;
Denysenko, IB ;
Gapon, AV ;
Johnston, TW .
PHYSICS OF PLASMAS, 2001, 8 (05) :1467-1481
[3]   Macroparticle separation and plasma collimation in positively biased ducts in filtered vacuum arc deposition systems [J].
Beilis, II ;
Keidar, M ;
Boxman, RL ;
Goldsmith, S .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (03) :1358-1365
[4]   Modelling of silicon hydride clustering in a low-pressure silane plasma [J].
Bhandarkar, UV ;
Swihart, MT ;
Girshick, SL ;
Kortshagen, UR .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (21) :2731-2746
[5]   TRANSITION FROM A CAPACITIVE TO A RESISTIVE REGIME IN A SILANE RADIO-FREQUENCY DISCHARGE AND ITS POSSIBLE RELATION TO POWDER FORMATION [J].
BOEUF, JP ;
BELENGUER, P .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (10) :4751-4754
[6]   Particulate formation and dusty plasma behaviour in argon-silane RF discharge [J].
Bouchoule, A. ;
Boufendi, L. .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1993, 2 (03) :204-213
[7]  
Bouchoule A, 1999, DUSTY PLASMAS PHYS C
[8]   Industrial developments of scientific insights in dusty plasmas [J].
Boufendi, L ;
Bouchoule, A .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 2002, 11 (3A) :A211-A218
[9]   Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon films [J].
Cabarrocas, PRI .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 :31-37
[10]  
CARTER CB, 2001, STRUCTURE PROPERTY R, V654