Step structures and kinking on Si(001)

被引：23

作者：

Bowler, DR

Bowler, MG

机构：

[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

[2] Univ Oxford, Nucl & Astrophys Lab, Oxford OX1 3RH, England

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.57.15385

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Growth of Si(001) tends to proceed at island edges acid step edges, seen in the formation of denuded zones and step-flow modes during growth. The high-temperature behavior of step edges, including kinking of step edges, is thus of vital importance in understanding growth mechanisms. These step edges have been characterized by step energies E-A and E-B per atom, together with a corner energy E-C associated with the introduction of any kink. In this paper, we present calculations of E-A, E-B, and the corner energy, and thoroughly analyze available experimental data for comparison.

引用

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页码：15385 / 15391

页数：7

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