Cyclotron resonance quantum Hall effect detector

被引：12

作者：

Andreev, BA

Erofeeva, IV

Gavrilenko, VI

Korotkov, AL

Yablonskiy, AN

Astafiev, O

Kawano, Y

Komiyama, S

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia

[2] Univ Tokyo, Dept Basic Sci, Meguro Ku, Tokyo 153, Japan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2001年 / 16卷 / 05期

关键词：

D O I：

10.1088/0268-1242/16/5/304

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The far-infrared photoresponse (20-80 cm(-1)) of a GaAs/AlGaAs detector operating at cyclotron resonance under quantum Hall effect conditions has been investigated. The response has been shown to arise near the magnetic fields corresponding to even values of the Landau level filling factor. A possibility of detector band tuning by a simultaneous increase of the magnetic field and the two-dimensional electron concentration (the latter due to the persistent photoconductivity after bandgap illumination) is demonstrated. The time constant of the response has been shown to increase dramatically with the rise of the magnetic field.

引用

页码：300 / 303

页数：4

共 19 条

[1] Infrared radiation from hot holes during spatial transport in selectively doped InGaAs/GaAs heterostructures with quantum wells [J].