Correlation between strain, optical and electrical properties of InN grown by MBE

被引：34

作者：

Cimalla, V ^{[1
]}

Förster, C ^{[1
]}

Kittler, G ^{[1
]}

Cimalla, I ^{[1
]}

Kosiba, R ^{[1
]}

Ecke, G ^{[1
]}

Ambacher, O ^{[1
]}

Goldhahn, R ^{[1
]}

Shokhovets, S ^{[1
]}

Georgakilas, A ^{[1
]}

Lu, H ^{[1
]}

Schaff, W ^{[1
]}

机构：

[1] Tech Univ Ilmenau, Ctr Micro & Nanotechnol, D-98693 Ilmenau, Germany

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303419

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The evolution of structural, optical and electrical properties was investigated for thin InN layers on either GaN or AlN buffer layers. Up to a layer thickness around 1 mum a biaxial strain is present in the layers. On AlN buffers the InN layers relax faster than on GaN. Both the interface and the surface affect the electron carrier concentration essentially. Thus, only with layers exceeding a thickness of 1 mum electron densities below 10(18) cm(-3) can be achieved. Optical spectroscopy indicates a band gap energy below 0.7 eV, however, the position of the absorption edge can be shifted up to 0.5 eV in thin layers. The Moss-Burstein shift due to the high electron concentration has the major influence on these effects. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2818 / 2821

页数：4

共 16 条

[1] Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures [J].

Ambacher, O ;

Majewski, J ;

Miskys, C ;

Link, A ;

Hermann, M ;

Eickhoff, M ;

Stutzmann, M ;

Bernardini, F ;

Fiorentini, V ;

Tilak, V ;

Schaff, B ;

Eastman, LF .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (13) :3399-3434

[2] Energy gap and optical properties of InxGal1-xN [J].

Bechstedt, F ;

Furthmüller, J ;

Ferhat, M ;

Teles, LK ;

Scolfaro, LMR ;

Leite, JR ;

Davydov, VY ;

Ambacher, O ;

Goldhahn, R .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 195 (03) :628-633

[3]

Davydov VY, 2002, PHYS STATUS SOLIDI B, V229, pR1, DOI 10.1002/1521-3951(200202)229:3<R1::AID-PSSB99991>3.0.CO

[4]

2-O

[5]

GOLDHAHN R, 2003, MATER RES SOC S P, V743, P9

[6] Physical properties of InN with the band gap energy of 1.1eV [J].

Inushima, T ;

Mamutin, VV ;

Vekshin, VA ;

Ivanov, SV ;

Sakon, T ;

Motokawa, M ;

Ohoya, S .

JOURNAL OF CRYSTAL GROWTH, 2001, 227 :481-485

[7]

KOSIBA R, IN PRESS NUCL INST B

[8] Improvement on epitaxial grown of InN by migration enhanced epitaxy [J].

Lu, H ;

Schaff, WJ ;

Hwang, J ;

Wu, H ;

Yeo, W ;

Pharkya, A ;

Eastman, LF .

APPLIED PHYSICS LETTERS, 2000, 77 (16) :2548-2550

[9]

Lu H, 2003, MATER RES SOC SYMP P, V743, P317

[10] Surface charge accumulation of InN films grown by molecular-beam epitaxy [J].

Lu, H ;

Schaff, WJ ;

Eastman, LF ;

Stutz, CE .

APPLIED PHYSICS LETTERS, 2003, 82 (11) :1736-1738

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