Tellurium-Free Thermoelectric: The Anisotropic n-Type Semiconductor Bi2S3

被引：220

作者：

Biswas, Kanishka ^{[1
]}

Zhao, Li-Dong ^{[1
]}

Kanatzidis, Mercouri G. ^{[1
]}

机构：

[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

来源：

ADVANCED ENERGY MATERIALS | 2012年 / 2卷 / 06期

关键词：

anisotropic transport properties; bismuth sulfide; semiconductors; thermal conductivity; thermoelectric properties; NANOSTRUCTURED THERMOELECTRICS; HIGH FIGURE; PERFORMANCE; MERIT; PBTE; AGPBMSBTE2+M; TEMPERATURE; EFFICIENCY; ELEMENTS; PBSE;

D O I：

10.1002/aenm.201100775

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

[No abstract available]

引用

页码：634 / 638

页数：5

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