Atomistic calculation of the interaction between an edge dislocation and a free surface

被引：22

作者：

Aslanides, A ^{[1
]}

Pontikis, V ^{[1
]}

机构：

[1] Ecole Polytech, CEA, DRECAM, Lab Solides Irradies,CNRS,Unite Mixte Rech 7642, F-91128 Palaiseau, France

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1998年 / 78卷 / 05期

关键词：

D O I：

10.1080/095008398177779

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By using molecular statics, we compute the variation in the excess energy associated with the gradual approach of an edge dislocation towards the free surface of a crystal. The calculations rely on a phenomenological potential adapted to aluminium and an appropriate constraint procedure that allows investigations of both the extended and the perfect configurations of the dislocation core. Thereby, an estimation of the energy required for the introduction of a dislocation in a thin film is obtained.

引用

页码：377 / 383

页数：7

共 17 条

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