A novel parametric-effect MEMS amplifier

被引:55
作者
Raskin, JP [1 ]
Brown, AR
Khuri-Yakub, BT
Rebeiz, GM
机构
[1] Catholic Univ Louvain, Microwave Lab, B-3000 Louvain, Belgium
[2] Univ Michigan, Radiat Lab, Ann Arbor, MI 48109 USA
[3] Stanford Univ, Edward L Ginzton Lab, Stanford, CA 94305 USA
关键词
D O I
10.1109/84.896775
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the theory and measurements of a mechanical parametric-effect amplifier with a 200-kHz input signal and a 1.84-MHz output signal. The device used is a MEMS time-varying capacitor which is composed of an array of low-stress metallized silicon-nitride diaphragms, and is pumped by a large-signal voltage at 1.64 MHz. This induces a large change in the capacitance, and results in parametric amplification of an input signal at 200 kHz. The parametric amplifier capacitance is 500 pF, resulting in an output impedance of 140 Omega. A higher impedance can also be achieved with a lower capacitance. To our knowledge, this device is the first-ever MEMS mechanical up-converter parametric-effect amplifier developed with an up-conversion ratio of 9 : 1. The measurements agree very well with theory, including the effect the series resistance and the Q of the MEMS time-varying capacitor. The application areas are in amplifiers which operate at very high temperatures (200 degreesC-600 degreesC), under high particle bombardment (nuclear applications), in non-semiconductor-based amplification, and in low-noise systems, since parametric amplifiers do not suffer from thermal, shot, or 1/f noise problems.
引用
收藏
页码:528 / 537
页数:10
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