A genuine quarter-filled band Mott insulator, (EDT-TTF-CONMe2)2AsF6:: Where the chemistry and physics of weak intermolecular interactions act in unison

被引：54

作者：

Heuzé, K

Fourmigué, M

Batail, P

Coulon, C

Clérac, R

Canadell, E

Auban-Senzier, P

Ravy, S

Jérome, D

机构：

[1] Univ Angers, Lab Chim Inorgan Mat & Interfaces, CNRS, FRE 2447, F-49045 Angers, France

[2] CNRS, Ctr Rech Paul Pascal, F-33600 Pessac, France

[3] CSIC, Inst Ciencia Mat Barcelona, E-08193 Bellaterra, Spain

[4] Univ Paris 11, Phys Solides Lab, CNRS, UMR 8502, F-91404 Orsay, France

[5] Univ Bordeaux 1, Chim Organ & Organomet Lab, CNRS, UMR 5802, F-33405 Talence, France

来源：

ADVANCED MATERIALS | 2003年 / 15卷 / 15期

关键词：

D O I：

10.1002/adma.200305247

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

C-1 symmetry and C-sp2-H...O and C-sp3-H...O hydrogen-bond donor/acceptor ability of the title phase pi-donor are expressed by a glide plane (a +/-c/2 repetition), uniform stacks, and a band structure quarter-filled with holes. Conductivity and spin susceptibility data demonstrate strong Mott localization at ambient pressure which is weakened at high pressure. These results show that the 1/4-Umklapp scattering channel is efficient enough for localization in 1D, strongly correlated electron systems.

引用

页码：1251 / +

页数：5

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