Mechanical stability of poly-Si TFT on metal foil

被引：17

作者：

Cheon, Jun Hyuk

Bae, Jung Ho

Jang, Jin ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 03期

关键词：

mechanical stability; metal foil; metal-induced crystallization with a nitride cap layer (MICC); poly-Si thin-film transistor (TFT);

D O I：

10.1016/j.sse.2007.10.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the mechanical stability of poly-Si thin-film transistor on 50 mu m-thick flexible metal foil with a field-effect mobility of 81.2 cm(2)/V s, a threshold voltage of - 2.4 V, and an on/off current ratio of 10(6). We have measured the electrical properties under various compressive and tensile strains by changing the bending radius of the base metal foil. We have found that the TFT is stable until the bending radius of 50 mm which corresponds to the strain of similar to 1.4%. (c) 2007 Elsevier Ltd. All rights reserved.

引用

收藏

页码：473 / 477

页数：5

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