Vanadium doped sol-gel TiO2 coatings

被引:18
作者
Crisan, M
Zaharescu, M
Crisan, D
Ion, R
Manolache, M
机构
[1] Romanian Acad, Inst Phys Chem, Bucharest 77208, Romania
[2] ZECASIN SA, Bucharest 77208, Romania
[3] ICECHIM, Inst Chem Res, Bucharest 77208, Romania
关键词
vanadium doped TiO2 films; sol-gel method; sensors; electrochemical properties; redox potential;
D O I
10.1023/A:1008625929465
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A study of the experimental conditions required to obtain vanadium doped sol-gel TiO2 coatings is presented. Tetraethyl orthotitanate was employed as the TiO2 source and VCl3, VOSO4. H2O and VOSO4 dissolved in H2SO4 were employed as vanadium sources. Dip coating has been used to produce coatings on silicon wafers, spectral carbon electrodes and titanium electrodes. Both supported and unsupported films have been studied by UV-Vis spectra, IR spectroscopy and X-ray diffraction (XRD). The measurements have been made on samples as prepared and treated thermally at temperatures between 100 degrees C and 300 degrees C. The thermal treatment temperatures have been established from DTA/TGA measurements. The vanadium doped sol-gel TiO2 coatings have been tested as sensors for redox potential measurements in electrochemical processes. The influence of both the thickness of films and the nature of substrate has been investigated.
引用
收藏
页码:775 / 778
页数:4
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