In situ ordering of FePt thin films by using Ag/Si and Ag/Mn3Si/Ag/Si templates

被引:39
作者
Hsu, YN [1 ]
Jeong, S [1 ]
Lambeth, DN [1 ]
Laughlin, DE [1 ]
机构
[1] Carnegie Mellon Univ, Pittsburgh, PA 15213 USA
基金
美国安德鲁·梅隆基金会; 美国国家科学基金会;
关键词
Ag underlayer; FePt film; high-K-u magnetic recording thin film; Mn3Si underlayer; epitaxial growth;
D O I
10.1109/20.908636
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In situ ordering of FePt thin films by sputtering onto Ag/Si and Ag/Mn3Si/Ag/Si templates has been demonstrated. Due to the evolution from island-like to a continuous film structure as a function of Ag thickness, the ordering and orientation of the FePt films both change with Ag thickness. A continuous (002) Ag film results in a greater L1(o) phase formation with c-axis oriented both perpendicular to and in the film plane while the island-like Ag template results in less L1(o) phase formation, hut a preferential c-axis orientation in the film plane. On the other hand, the FePt films deposited onto the Ag/Mn3Si/Ag/Si template have their c axes aligned perpendicular to the film plane.
引用
收藏
页码:2945 / 2947
页数:3
相关论文
共 5 条
[1]   Control of the axis of chemical ordering and magnetic anisotropy in epitaxial FePt films [J].
Farrow, RFC ;
Weller, D ;
Marks, RF ;
Toney, MF ;
Cebollada, A ;
Harp, GR .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) :5967-5969
[2]   Growth of CoCrTa(11(2)over-bar0)-oriented thin films on a D03 Mn3Si(002) underlayer [J].
Hsu, YN ;
Laughlin, DE ;
Lambeth, DN .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :6698-6700
[3]   EPITAXIAL PTFE(001) THIN-FILMS ON MGO(001) WITH PERPENDICULAR MAGNETIC-ANISOTROPY [J].
LAIRSON, BM ;
VISOKAY, MR ;
SINCLAIR, R ;
CLEMENS, BM .
APPLIED PHYSICS LETTERS, 1993, 62 (06) :639-641
[4]   DIRECT FORMATION OF ORDERED COPT AND FEPT COMPOUND THIN-FILMS BY SPUTTERING [J].
VISOKAY, MR ;
SINCLAIR, R .
APPLIED PHYSICS LETTERS, 1995, 66 (13) :1692-1694
[5]   Epitaxial Ag templates on Si(001) for bicrystal CoCrTa media [J].
Yang, W ;
Lambeth, DN ;
Tang, L ;
Laughlin, DE .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :4370-4372