Lateral growth of highly oriented graphite by chemical vapor deposition upon Pt film formed on sapphire

被引：2

作者：

Yudasaka, M ^{[1
]}

Kikuchi, R ^{[1
]}

Matsui, T ^{[1
]}

Ohki, Y ^{[1
]}

Ota, E ^{[1
]}

Yoshimura, S ^{[1
]}

机构：

[1] GUNMA UNIV,FAC ENGN,DEPT CHEM,KIRYU,GUMMA 376,JAPAN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1996年 / 156卷 / 01期

关键词：

D O I：

10.1002/pssa.2211560114

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Islands of highly oriented graphite were grown by chemical vapor deposition at 900 degrees C upon a Pt film with initial thickness 50 nm formed on sapphire. The value of mosaic spread estimated from a rocking curve for graphite (002) X-ray diffraction was 0.27 degrees which is smaller than that of highly oriented pyrolytic graphite. Depth profiles of elements measured by Auger analyses indicated that dips appeared during chemical vapor deposition in the originally flat Pt film. The depth profiles also indicated that the graphite islands grew within the dips in the Pt film. It was found that the surface planes (110) and (001) of sapphire yield a better aligned graphite than (012).

引用

页码：107 / 112

页数：6

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