Three-dimensional simulation of rapid melting and resolidification of thin Si films by excimer laser annealing

A model has been developed for the rapid melting and resolidification of thin Si films induced by excimer-laser annealing. The key feature of this model is its ability to simulate lateral growth and random nucleation. The first component of the model is a set of rules for phase change. The second component is a set of functions for computing the latent heat and the displacement of the solid-liquid interface resulting from the phase change. The third component is an algorithm that allows for random nucleation based on classical nucleation theory. Consequently, the model enables the prediction of lateral growth length (LGL), as well as the calculation of other critical responses of the quenched film such as solid-liquid interface velocity and undercooling. Thin amorphous Si films with thickness of 30, 50, and 100 nm were annealed under various laser fluences to completely melt the films. The resulting LGL were measured using a scanning electron microscope. Using physical parameters that were consistent with previous studies, the simulated LGL values agree well with the experimental results over a wide range of irradiation conditions. Sensitivity analysis was done to demonstrate the behavior of the model with respect to a select number of model parameters. Our simulations suggest that, for a given fluence, controlling the film's quenching rate is essential for increasing LGL. To this end, the model is an invaluable tool for evaluating and choosing irradiation strategies for increasing lateral growth in laser-crystallized silicon films. (C) 2003 American Institute of Physics.