共 5 条
Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate
被引:7
作者:
Liu, JL
[1
]
Cai, SJ
[1
]
Jin, GL
[1
]
Tang, YS
[1
]
Wang, KL
[1
]
机构:
[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA
基金:
美国国家科学基金会;
关键词:
gas-source MBE;
vapor-liquid-solid;
growth mechanism;
Si wires;
D O I:
10.1006/spmi.1998.0678
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
Freestanding Si nano-wires were grown by gas source molecular beam epitaxy on Au/Si (100), (111), (110), and (113) substrates. The morphology of Si nano-wires is investigated using scanning electron microscopy. This method provides a possible way to fabricate silicon quantum wires. (C) 1999 Academic Press.
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页码:477 / 479
页数:3
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