Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate

被引:7
作者
Liu, JL [1 ]
Cai, SJ [1 ]
Jin, GL [1 ]
Tang, YS [1 ]
Wang, KL [1 ]
机构
[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA
基金
美国国家科学基金会;
关键词
gas-source MBE; vapor-liquid-solid; growth mechanism; Si wires;
D O I
10.1006/spmi.1998.0678
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Freestanding Si nano-wires were grown by gas source molecular beam epitaxy on Au/Si (100), (111), (110), and (113) substrates. The morphology of Si nano-wires is investigated using scanning electron microscopy. This method provides a possible way to fabricate silicon quantum wires. (C) 1999 Academic Press.
引用
收藏
页码:477 / 479
页数:3
相关论文
共 5 条
  • [1] FUNDAMENTAL ASPECTS OF VLS GROWTH
    GIVARGIZOV, EI
    [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 20 - 30
  • [2] A method for fabricating silicon quantum wires based on SiGe/Si heterostructure
    Liu, JL
    Shi, Y
    Wang, F
    Lu, Y
    Zhang, R
    Han, P
    Gu, SL
    Zheng, YD
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (03) : 352 - 354
  • [3] OPTICAL ANISOTROPY IN WIRE-GEOMETRY SIGE LAYERS GROWN BY GAS-SOURCE SELECTIVE EPITAXIAL-GROWTH TECHNIQUE
    USAMI, N
    MINE, T
    FUKATSU, S
    SHIRAKI, Y
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (09) : 1126 - 1128
  • [4] VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH ( NEW METHOD GROWTH CATALYSIS FROM IMPURITY WHISKER EPITAXIAL + LARGE CRYSTALS SI E )
    WAGNER, RS
    ELLIS, WC
    [J]. APPLIED PHYSICS LETTERS, 1964, 4 (05) : 89 - &
  • [5] STUDY OF FILAMENTARY GROWTH OF SILICON CRYSTALS FROM VAPOR
    WAGNER, RS
    ELLIS, WC
    ARNOLD, SM
    JACKSON, KA
    [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 2993 - +