High-saturation high-speed traveling-wave InGaAsP-InP electroabsorption modulator

被引：39

作者：

Li, GL ^{[1
]}

Pappert, SA

Mages, P

Sun, CK

Chang, WSC

Yu, PKL

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] SPAWAR Syst Ctr, San Diego, CA 92152 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 10期

关键词：

broad-band modulation; electroabsorption; high saturation; traveling-wave modulator;

D O I：

10.1109/68.950740

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-saturation power traveling-wave electroabsorption modulators (TW-EAMs) with modulation bandwidth greater than 40 GHz have been demonstrated. Microwave properties of the TW-EAM waveguide are extracted from the measured S-parameters using the equivalent circuit model in [4]. Excellent agreement is obtained between the predicted and the measured frequency responses.

引用

页码：1076 / 1078

页数：3

共 6 条

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