MoS2 deposited by ion beam assisted deposition:: 2H or random layer structure?

被引：16

作者：

Dunn, DN ^{[1
]}

Seitzman, LE ^{[1
]}

Singer, IL ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 1998年 / 13卷 / 10期

关键词：

D O I：

10.1557/JMR.1998.0410

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structure of MoS2 films grown by ion beam assisted deposition is investigated using transmission electron microscopy. Films consist of stacks of S-Mo-S planes with a [001] texture; however, three-dimensional crystal symmetry is disrupted by a high density of planar defects. Selected area electron diffraction patterns show (hk0) and (00l) reflections, features similar to a random layer structure, as well as diffuse (103) reflections. It is suggested that these films do not have a true random layer structure, but rather a two-dimensional structure formed by nonrandom in-plane translations.

引用

页码：3001 / 3007

页数：7

共 21 条

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