High CW power (>200mW/facet) at 3.4 mu m from InAsSb/InAlAsSb strained quantum well diode lasers

被引:45
作者
Choi, HK
Turner, GW
Manfra, MJ
机构
[1] Lincoln Laboratory, Massachusetts Inst. of Technology, Lexington
关键词
semiconductor junction lasers; semiconductor quantum wells;
D O I
10.1049/el:19960873
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Strained quantum well diode lasers consisting of compressively strained InAsSb active layers and tensile strained InAlAsSb barrier layers have exhibited CW power of 215mW/facet at 80 K. The internal quantum efficiency and internal loss coefficient at 80 K are estimated to be 63% and 9cm(-1), respectively.
引用
收藏
页码:1296 / 1297
页数:2
相关论文
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