Strained multiple quantum well lasers grown on GaSb emitting between 2 and 2.4 mu m

被引：12

作者：

Baranov, AN

Cuminal, Y

Bertru, N

Alibert, C

Joullie, G

机构：

来源：

INTEGRATED OPTICS DEVICES: POTENTIAL FOR COMMERCIALIZATION | 1997年 / 2997卷

关键词：

D O I：

10.1117/12.264141

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low threshold lasers based on GaInSbAs/GaSb type-II QW structures operating between 2 and 2.4 mu m at room temperature have been fabricated. The RT threshold current density as low as 305 A/cm(2) was obtained for a 900-mu m-long laser emitting at 2.36 mu m. High efficiency of indirect radiative recombination is explained by accumulation of holes in potential wells situated in barrier layers near the QW interfaces.

引用

页码：2 / 13

页数：12