Influence of various donors on nonlinear I-V characteristics of tin dioxide ceramics

被引：60

作者：

Dhage, SR ^{[1
]}

Ravi, V ^{[1
]}

机构：

[1] Natl Chem Lab, Phys & Mat Chem Div, Pune 411008, Maharashtra, India

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 22期

关键词：

D O I：

10.1063/1.1631390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of different donors such as Nb, Ta, Sb, and V on nonlinear current (I)-voltage (V) relations of tin dioxide ceramics is investigated. The room-temperature resistivity (rho), nonlinear coefficient (alpha), breakdown electric field (E-B) and barrier height (Phi(B)) are calculated as a function of donor content. The present system contains fewer additives as compared to ZnO varistor wherein small quantities of variety of metal oxides are added. Optimum doping of antimony-doped samples shows promising behavior for low-voltage varistor application. (C) 2003 American Institute of Physics.

引用

页码：4539 / 4541

页数：3

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