Origin and thermal stability of HK in FeTaN thin films

In this study 2000 Angstrom FeTaN thin films are annealed at 150 degrees C in both longitudinal and transverse magnetic fields. Both anneals result in a decrease in H-K, which is shown to be a result of interstitial N, however, the transverse anneal results in a 90 degrees rotation of H-K and a 33% larger decrease in the magnitude of H-K as compared to the longitudinal anneal. Subsequent transverse field anneals show that H-K is completely reversible in relatively short times at any temperature above 75 degrees C. Our results are consistent with the diffusion of interstitial N being responsible for the rotatable behavior of H-K in FeTaN. (C) 1999 American Institute of Physics. [S0021-8979(99)15108-9].