Relative stability of negative and positive trions in model symmetric quantum wires

被引:25
作者
Szafran, B
Chwiej, T
Peeters, FM
Bednarek, S
Adamowski, J
机构
[1] Univ Antwerp, Dept Phys, B-2610 Antwerp, Belgium
[2] AGH Univ Sci & Technol, Fac Phys & Appl Comp Sci, PL-30059 Krakow, Poland
关键词
D O I
10.1103/PhysRevB.71.235305
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Binding energies of negative (X-) and positive trions (X+) in quantum wires are studied for strong quantum confinement of carriers which results in a numerical exactly solvable model. The relative electron and hole confinement have a strong effect on the stability of trions. For equal hole and electron confinement, X+ is more stable but a small imbalance of the particle confinement towards a stronger hole confinement, e.g., due to its larger effective mass, leads to the interchange of X- and X+ recombination lines in the photoluminescent spectrum as was recently observed experimentally. In case of larger X- stability, a magnetic field oriented parallel to the wire axis leads to a stronger increase of the X+ binding energy resulting in a crossing of the X+ and X- lines.
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页数:8
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共 30 条
[1]   Effective interaction for charge carriers confined in quasi-one-dimensional nanostructures [J].
Bednarek, S ;
Szafran, B ;
Chwiej, T ;
Adamowski, J .
PHYSICAL REVIEW B, 2003, 68 (04)
[2]   Neutral and charged electron-hole complexes in artificial molecules: Quantum transitions induced by the in-plane magnetic field [J].
Bellucci, D ;
Troiani, F ;
Goldoni, G ;
Molinari, E .
PHYSICAL REVIEW B, 2004, 70 (20) :205332-1
[3]   Stability of optically active charged excitons in quasi-two-dimensional systems [J].
Chapman, JR ;
Johnson, NF ;
Nicopoulos, VN .
PHYSICAL REVIEW B, 1997, 55 (16) :10221-10224
[4]   APPLICATION OF THE IMAGINARY TIME STEP METHOD TO THE SOLUTION OF THE STATIC HARTREE-FOCK PROBLEM [J].
DAVIES, KTR ;
FLOCARD, H ;
KRIEGER, S ;
WEISS, MS .
NUCLEAR PHYSICS A, 1980, 342 (01) :111-123
[5]  
Esser A, 2001, PHYS STATUS SOLIDI B, V227, P317, DOI 10.1002/1521-3951(200110)227:2<317::AID-PSSB317>3.0.CO
[6]  
2-S
[7]   Influence of well-width fluctuations on the binding energy of excitons, charged excitons, and biexcitons in GaAs-based quantum wells [J].
Filinov, AV ;
Riva, C ;
Peeters, FM ;
Lozovik, YE ;
Bonitz, M .
PHYSICAL REVIEW B, 2004, 70 (03) :035323-1
[8]   GROUND BOUND-STATES IN 2-ELECTRON SYSTEMS WITH Z=1 [J].
FROLOV, AM ;
YEREMIN, AY .
JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 1989, 22 (08) :1263-1268
[9]   Comparative study of the negatively and positively charged excitons in GaAs quantum wells [J].
Glasberg, S ;
Finkelstein, G ;
Shtrikman, H ;
Bar-Joseph, I .
PHYSICAL REVIEW B, 1999, 59 (16) :10425-10428
[10]   Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures [J].
González, L ;
García, JM ;
García, R ;
Briones, F ;
Martínez-Pastor, J ;
Ballesteros, C .
APPLIED PHYSICS LETTERS, 2000, 76 (09) :1104-1106