Photoluminescence from Pr3+-doped chalcogenide glasses excited by bandgap light

被引:23
作者
Harada, H [1 ]
Tanaka, K [1 ]
机构
[1] Hokkaido Univ, Fac Engn, Dept Appl Phys, Sapporo, Hokkaido 0608628, Japan
关键词
D O I
10.1016/S0022-3093(99)00095-2
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Mechanisms of bandgap-excited photoluminescence in Pr3+-doped chalcogenide glasses have been studied by examination of composition and temperature dependences, responses to optical pulses, and light-soaking effects. Marked photoluminescence from the Pr3+ ions at 1.6 mu m is observed only in selenide glasses. The temperature dependence and pulsed response are different from those of the host-glass photoluminescence at 1.3 mu m. Under prolonged illumination, at room temperature, photodarkening appears with reduction of the Pr3+ photoluminescence. These observations are discussed on the basis of a model proposed for bandgap-excited photoluminescence in rare-earth-ion doped chalcogenide glasses. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:189 / 196
页数:8
相关论文
共 16 条
[1]  
Borisova Z U, 1981, GLASSY SEMICONDUCTOR, P261
[2]  
FLUCK E, 1992, GMELIN HDB INORGANIC, P259
[3]   PHOTOLUMINESCENCE AND EXCITATION SPECTROSCOPY OF ER-DOPED AS2S3 GLASS - NOVEL BROAD-BAND EXCITATION MECHANISM [J].
GU, SQ ;
RAMACHANDRAN, S ;
REUTER, EE ;
TURNBULL, DA ;
VERDEYEN, JT ;
BISHOP, SG .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) :3365-3371
[4]   TRANSIENT PHOTOINDUCED PHENOMENA IN AMORPHOUS-CHALCOGENIDE THIN-FILMS [J].
IIJIMA, M ;
KURITA, S .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2103-2105
[5]  
Mott NF., 1971, Electronic Processes in Non-crystalline Materials
[6]   Anomalous temperature quenching of fluorescence in Pr3+ doped sulfide glass [J].
Quimby, RS ;
Aitken, BG .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (08) :3992-3996
[7]  
Riseberg L.A., 1977, PROGR OPTICS, V14, P89
[8]   Photoinduced effects and metastability in amorphous semiconductors and insulators [J].
Shimakawa, K ;
Kolobov, A ;
Elliott, SR .
ADVANCES IN PHYSICS, 1995, 44 (06) :475-588
[9]   LUMINESCENCE IN AMORPHOUS-SEMICONDUCTORS [J].
STREET, RA .
ADVANCES IN PHYSICS, 1976, 25 (04) :397-453
[10]   DEFECT STATES IN GE CHALCOGENIDES OBSERVED BY PHOTO-LUMINESCENCE AND ESR [J].
STREET, RA ;
BIEGELSEN, DK .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :339-358