Capacitance network model of the short channel effect for 0.1 mu m fully depleted SOI MOSFET

被引：14

作者：

Koh, R ^{[1
]}

Kato, H ^{[1
]}

Matsumoto, H ^{[1
]}

机构：

[1] NEC CORP LTD,ULSI DEVICE DEV LABS,SAGAMIHARA,KANAGAWA 229,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

SOI; MOSFET; short channel effect; analytical model; capacitance; threshold voltage; S factor;

D O I：

10.1143/JJAP.35.996

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a simple analytical model of the short channel effect in a fully depleted silicon-on-insulator metaloxide-silicon field effect transistor (SOI-MOSFET). The influence sf the two-dimensional effect on the potential distribution, the threshold voltage and the S factor are evaluated based on the spatial distribution of the characteristic capacitances between the SOI body and each electrode (gate, source, drain and substrate). This treatment makes it possible to estimate the two-dimensional effect without solving Poisson's equation which requires a large computation time. This model describes the short channel effect down to the 0.1 mu m regime.

引用

页码：996 / 1000

页数：5