Spin cast ferroelectric beta poly(vinylidene fluoride) thin films via rapid thermal annealing

被引：126

作者：

Kang, Seok Ju ^{[1
]}

Park, Youn Jung ^{[1
]}

Sung, Jinwoo ^{[1
]}

Jo, Pil Sung ^{[1
]}

Park, Cheolmin ^{[1
]}

Kim, Kap Jin ^{[2
]}

Cho, Beong Ok ^{[3
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[2] Kyung Hee Univ, Coll Environm & Appl Chem, Yongin 446701, Gyeonggi Do, South Korea

[3] Samsung Elect Giheung Factory, New Memory Proc Dev Team, Yongin 446711, Gyeonggi Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 01期

关键词：

D O I：

10.1063/1.2830701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe a method of fabricating ferroelectric beta-type poly(vinylidene fluoride) (PVDF) thin films on Au substrate by the humidity controlled spin casting combined with rapid thermal treatment. Our method produces thin uniform ferroelectric PVDF film with ordered beta crystals consisting of characteristic needlelike microdomains. A capacitor with a 160 nm thick ferroelectric PVDF film exhibits the remanent polarization and coercive voltage of similar to 7.0 mu C/cm(2) and 8 V, respectively, with the temperature stability of up to 160 degrees C. A ferroelectric field effect transistor also shows a drain current bistablility of 100 at zero gate voltage with +/- 20 V gate voltage sweep. (C) 2008 American Institute of Physics.

引用

页数：3

共 17 条

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