IBIC and IBIL microscopy applied to advanced semiconductor materials

被引：20

作者：

Manfredotti, C

Fizzotti, F

Polesello, P

Vittone, E

Truccato, M

Lo Giudice, A

Jaksic, M

Rossi, P

机构：

[1] Univ Turin, Expt Phys Dept, I-10125 Turin, Italy

[2] Rudjer Boskovic Inst, Zagreb 10000, Croatia

[3] Univ Padua, Dept Phys, I-35131 Padua, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1998年 / 136卷

关键词：

D O I：

10.1016/S0168-583X(97)00829-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A new version of the classical IBIC technique is presented together with a comparison between IBIC and IBIL microscopy with the aim of obtaining maps of radiative recombination centers in technologically advanced materials. In some cases (Si,CdTe) the method is used to profile the electrical field in the bulk of the sample, in other cases (GaAs,CVD diamond) maps of charge collection length are obtained and compared with morphological and structural features. A model for the interpretation of both IBIC and IBIL maps and spectra is presented and qualitatively discussed. In our opinion, maps of the IBIL/IBIC ratio could be used in order to obtain maps of radiative recombination centers. (C) 1998 Elsevier Science B.V.

引用

页码：1333 / 1339

页数：7

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