MIM HfO2 low leakage capacitors for eDRAM integration at interconnect levels

被引：3

作者：

Mazoyer, P ^{[1
]}

Blonkowski, S ^{[1
]}

Mondon, F ^{[1
]}

Farcy, A ^{[1
]}

Torres, J ^{[1
]}

Reimbold, G ^{[1
]}

Martin, F ^{[1
]}

Damlencourt, JF ^{[1
]}

Morand, Y ^{[1
]}

Bicais, N ^{[1
]}

Descombes, S ^{[1
]}

机构：

[1] STMicroelectronics, F-38926 Crolles, France

来源：

PROCEEDINGS OF THE IEEE 2003 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2003年

关键词：

D O I：

10.1109/IITC.2003.1219729

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

An innovative 6 nm HfO2 MIM capacitor was integrated in interconnect levels for eDRAM functions. HfO2 layers or Al2O3-HfO2 stacks were deposited by ALCVD(R). Using damascene process with TiN electrodes, this method is fully compatible with copper interconnects technology. No high temperature annealing is required to obtain dielectric performances satisfying eDRAM needs: 30 fF per cell, low leakages and high reliability.

引用

页码：117 / 119

页数：3

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